Balıkesir Üniversitesi — ana sayfa AKADEMİK BİLGİ SİSTEMİ

Prof.Dr. ALİ TEKE

FEN-EDEBİYAT FAKÜLTESİ, FİZİK BÖLÜMÜ, KATIHAL FİZİĞİ ANABİLİM DALI

Balıkesir Üniversitesi

Araştırmacı Kimlikleri

Akademik Göstergeler

  • Web of Science: 40 yayın, 12907 atıf, h-indeks 14
  • Scopus: 44 yayın, 12641 atıf, h-indeks 15
  • YÖKSİS: 45 yayın, 302 atıf, h-indeks 1

Makaleler (47)

  1. Optical and Antibacterial Performance of Dy³⁺/Tb³⁺ co-doped SnO₂ Nanoparticles Synthesized From the Green Synthesis of Laurus nobilis L. Extract
    ÇOBAN MUSTAFA BURAK,ÖMÜR PEKEL ÖZGEN,TÜLEK REMZİYE,TEKE ALİ,YAĞIZ ERDEMİR GÜLER,BABACAN ORKUN,ÜNAL FATMA,KOÇER KIZILDUMAN BERNA,DOĞAN MEHMET · Mining, Metallurgy & Exploration · 2026 · Uluslararası · Q2 · DOI: 10.1007/s42461-026-01605-0
  2. Enhanced luminescence, photocatalytic and antibacterial performance of Ag+/Eu3+ co-doped MgO nanophosphors
    TÜLEK REMZİYE,TEKE ALİ,YAĞIZ ERDEMİR GÜLER,BABACAN ORKUN,ÜNAL FATMA,ÇOBAN MUSTAFA BURAK · Ceramics International · 2026 · Uluslararası · Q1 · DOI: 10.1016/j.ceramint.2025.12.387
  3. A comprehensive review of ZnO materials and devices
    Özgür Ü,Alivov Ya I,Liu C,TEKE ALİ,Reshchikov MA,Doğan S,Avrutin V,Cho SJ,Morkoç H · Journal of Applied Physics · 2005 · Uluslararası · Q1 · DOI: 10.1063/1.1992666
  4. p GaN i GaN AlGaN multiple quantum well n AlGaN back illuminated ultraviolet detectors
    TEKE ALİ,DOĞAN SEYDİ,He L,Huang D,Yun F,Mikkelson M,Morkoç H,Zhang S K,Wang W B,Alfano R R · Journal of Electronic Materials · 2003 · Uluslararası · Q1 · DOI: 10.1007/s11664-003-0149-4
  5. Excitonic fine structure and recombination dynamics in single-crystalline ZnO
    Teke A. · Physical Review B Condensed Matter and Materials Physics · 2004 · Uluslararası · DOI: 10.1103/PhysRevB.70.195207
  6. Photoionization study of deep centers in GaN/AlGaN multiple quantum wells
    Zhang S.K. · Journal of Vacuum Science and Technology B Nanotechnology and Microelectronics · 2010 · Uluslararası · Q1 · DOI: 10.1116/1.3268613
  7. GaN AlGaN back illuminated multiple quantum well Schottky barrier ultraviolet photodetectors
    TEKE ALİ,DOĞAN SEYDİ,Yun F,Reshchikov MA,Le H,Liu XQ,Morkoç H,Zhang SK,Wang WB,Alfano RR · Solid-State Electronics · 2003 · Uluslararası · Q1 · DOI: 10.1016/S0038-1101(03)00068-6
  8. 4H SiC photoconductive switching devices for use in high power applications
    DOĞAN SEYDİ,TEKE ALİ,Huang D,Morkoç H,Roberts C B,Parish J,Ganguly B,Smith M,Myers R E,Saddow S E · Applied Physics Letters · 2003 · Uluslararası · Q1 · DOI: 10.1063/1.1571667
  9. Synthesis and characterization of well-dispersed amorphous LnBO3·3H2O (Ln: Dy, Tb) nanoparticles
    Beyaz S. · Chemical Papers · 2020 · Uluslararası · Q2 · DOI: 10.1007/s11696-020-01081-w
  10. Thermally robust dual-band anti-thermal quenching in alkali-co-doped K7SrGd2(B5O10)3:Tb3+ phosphors
    Altowyan Abeer S.,TÜLEK REMZİYE,TEKE ALİ,ÇOBAN MUSTAFA BURAK,GÖK CEM,KAYNAR ÜMİT HÜSEYİN,Hakami Jabir,AYDIN HASAN,CAN NURDOĞAN · Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy · 2026 · Uluslararası · Q1 · DOI: 10.1016/j.saa.2026.127898
  11. Charge-compensated LiCa₄O(BO₃)₃:Tb3+ phosphors: K+/Na+-assisted lattice engineering for thermally robust green emission and luminescent thermometry
    ÇOBAN MUSTAFA BURAK,TÜLEK REMZİYE,TEKE ALİ,KAYNAR ÜMİT HÜSEYİN,AYDIN HASAN,ÖZCAN YUSUF · Journal of Photochemistry and Photobiology A: Chemistry · 2026 · Uluslararası · Q1 · DOI: 10.1016/j.jphotochem.2026.117194
  12. Temperature dependent hot electron transport in slightly lattice mismatched AlInN AlN GaN heterostructures
    ILGAZ AYKUT,GÖKDEN SİBEL,TÜLEK REMZİYE,TEKE ALİ,ÖZÇELİK SÜLEYMAN,ÖZBAY EKMEL · JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS · 2014 · Uluslararası · Q3
  13. Energy relaxations of hot electrons in AlGaN AlN GaN heterostructures grown by MOCVD on sapphire and 6H SiC substrates
    ILGAZ AYKUT,GÖKDEN SİBEL,TÜLEK REMZİYE,TEKE ALİ,ÖZÇELİK SÜLEYMAN,ÖZBAY EKMEL · EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS · 2011 · Uluslararası · Q2 · DOI: 10.1051/epjap/2011110218
  14. Comparison of the transport properties of high quality AlGaN AlN GaN and AlInN AlN GaN two dimensional electron gas heterostructures
    TÜLEK REMZİYE,ILGAZ AYKUT,GÖKDEN SİBEL,TEKE ALİ,ÖZTÜRK MUSTAFAKEMAL,KASAP MEHMET,ÖZÇELİK SÜLEYMAN,Arslan Engin,ÖZBAY EKMEL · Journal of Applied Physics · 2009 · Uluslararası · Q1 · DOI: 10.1063/1.2996281
  15. Predominant Scattering Mechanisms in Quaternary AlInGaN/GaN Heterostructures
    TÜLEK REMZİYE, GÖKDEN SİBEL, TEKE ALİ, ARSLAN ENGİN, ÖZBAY EKMEL · European journal of applied physics · 2022 · Uluslararası · DOI: 10.24018/ejphysics.2022.4.6.228
  16. Transport properties of epitaxial graphene grown on SiC substrate
    Ağizacmak S. · Optoelectronics and Advanced Materials Rapid Communications · 2017 · Uluslararası · Q3
  17. Synthesis and optical characterization of bipod carbazole derivatives
    ÇİÇEK BAKİ,ÇAĞLI Merve,TÜLEK REMZİYE,TEKE ALİ · Heterocyclic Communications · 2020 · Uluslararası · Q4 · DOI: 10.1515/hc-2020-0111
  18. The effect of AlN interlayer thicknesses on scattering processes in lattice matched AlInN GaN two dimensional electron gas heterostructures
    TEKE ALİ,GÖKDEN SİBEL,TÜLEK REMZİYE,Leach J H,Fan Q,Xie J,Özgür Ü,Morkoç H,LİŞESİVDİN SEFER BORA,ÖZBAY EKMEL · New Journal of Physics · 2009 · Uluslararası · Q1 · DOI: 10.1088/1367-2630/11/6/063031
  19. Mobility limiting scattering mechanisms in nitride based two dimensional heterostructures with the InGaN channel
    GÖKDEN SİBEL, TÜLEK REMZİYE, TEKE ALİ, Leach J H, Fan Q, Xie J, Özgür, Ü, MORKOÇ H, LİŞESİVDİN SEFER BORA, ÖZBAY EKMEL · SEMICONDUCTOR SCIENCE AND TECHNOLOGY · 2010 · Uluslararası · Q1 · DOI: 10.1088/0268-1242/25/4/045024
  20. The temperature and excitation power density dependent photoluminescence study of Ga-doped ZnO thin films
    Kayral Senem, GÖKDEN SİBEL, TÜLEK REMZİYE, TEKE ALİ · JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS · 2022 · Uluslararası · Q4
  21. The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN AlN GaN AlN GaN double channel heterostructure
    Tülek Remziye, Arslan Engin, Bayraklı A, Turhan S, Gökden S, Duygulu Ö, Kaya AA, Fırat T, Teke A, Özbay E · Thin Solid Films · 2014 · Uluslararası · Q1 · DOI: 10.1016/j.tsf.2013.11.114
  22. Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD
    NARİN POLAT, KUTLU-NARİN ECE, KAYRAL SENEM, TÜLEK REMZİYE, GÖKDEN SİBEL, TEKE ALİ, LİŞESİVDİN SEFER BORA · Journal of Luminescence · 2022 · Uluslararası · Q2 · DOI: 10.1016/j.jlumin.2022.119158
  23. Comparison of photoluminescence properties of Zn-and O-polar ZnO thin films
    Tülek R. · Journal of Optoelectronics and Advanced Materials · 2023 · Uluslararası · Q4
  24. The applicability of model to the degenerate InN
    GÖKDEN SİBEL, TEKE ALİ, TÜLEK REMZİYE · Optoelectronics and Advanced Materials – Rapid Communications · 2007 · Uluslararası · Q3
  25. Synthesis and optical characterization of novel carbazole Schiff bases
    Çicek Baki,ÇALIŞIR ÜMİT,Tavaslı Mustafa,TÜLEK REMZİYE,TEKE ALİ · JOURNAL OF MOLECULAR STRUCTURE · 2018 · Uluslararası · Q3 · DOI: 10.1016/j.molstruc.2017.09.109
  26. Current-transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
    Arslan E. · Thin Solid Films · 2013 · Uluslararası · Q1 · DOI: 10.1016/j.tsf.2013.09.026
  27. GaN epitaxy on thermally treated c plane bulk ZnO substrates with O and Zn faces
    Gu Xing,Reshchikov Michael A,TEKE ALİ,Johnstone Daniel,Morkoç Hadis,Nemeth Bill,Nause Jeff · Applied Physics Letters · 2004 · Uluslararası · Q1 · DOI: 10.1063/1.1690469
  28. Analysis of a hot electron light emitting device at low and highelectric and magnetic fields
    TEKE ALİ · PHYSICA STATUS SOLIDI A-APPLIED RESEARCH · 2001 · Uluslararası · DOI: 10.1002/1521-396X(200108)186:3<493::AID-PSSA493>3.3.CO;2-T
  29. Analysis of a hot electron light emitting device at low and high electric and magnetic fields
    Teke A. · Physica Status Solidi A Applied Research · 2001 · Uluslararası · DOI: 10.1002/1521-396X(200108)186:3<493::AID-PSSA493>3.0.CO;2-1
  30. A tunable hot electron light emitter
    TEKE ALİ,Gupta R,Balkan N,Vleuten W van der,Wolter J H · Semiconductor Science and Technology · 1997 · Uluslararası · Q1 · DOI: 10.1088/0268-1242/12/3/013
  31. Effect of thermal treatment on ZnO substrate for epitaxial growth
    Gu Xing,Sabuktagin Shariar,TEKE ALİ,Johnstone Daniel,Morkoç Hadis,Nemeth Bill,Nause Jeff · Journal of Materials Science: Materials in Electronics · 2004 · Uluslararası · Q2 · DOI: 10.1023/B:JMSE.0000025681.89561.13
  32. Stimulated emission and time resolved photoluminescence in rf sputtered ZnO thin films
    Ü Özgür,TEKE ALİ,Liu C,S-J Cho,Morkoç H,H O Everitt · Applied Physics Letters · 2004 · Uluslararası · Q1 · DOI: 10.1063/1.1713034
  33. Tunable wavelength light emission from longitudinally biased p GaAs n Ga1 xAlxAs junction containing GaAs quantum wells non linear dynamics
    Balkan N,TEKE ALİ,Gupta R · Physica E: Low-dimensional Systems and Nanostructures · 1999 · Uluslararası · Q2 · DOI: 10.1016/S1386-9477(99)00015-6
  34. Tunable Wavelength Hot Electron Light Emitter
    Balkan N,TEKE ALİ,Straw A,Gupta R,H Wolter J,van der Vleuten W · Applied Physics Letters · 1995 · Uluslararası · DOI: 10.1063/1.114700
  35. The electrical optical and structural properties of GaN epitaxial layers grown on Si 111 substrate with interlayers
    Arslan Engin,Özgür Duygulu,KAYA ALİ ARSLAN,TEKE ALİ,ÖZÇELİK SÜLEYMAN,ÖZBAY EKMEL · Superlattices and Microstructures · 2009 · Uluslararası · Q1 · DOI: 10.1016/j.spmi.2009.09.009
  36. Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD
    Arslan E. · Journal of Physics D Applied Physics · 2008 · Uluslararası · Q1 · DOI: 10.1088/0022-3727/41/15/155317
  37. In plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
    Mazzucato S,Balkan N,TEKE ALİ,EROL AYŞE,Potter RJ,ARIKAN MEHMET ÇETİN,Marie X,Fontaine C,Carrère H,Bedel E,Lacoste G · Journal of Applied Physics · 2003 · Uluslararası · Q1 · DOI: 10.1063/1.1541104
  38. Hot electron light-emitting semiconductor heterostructure device - type 2
    Gupta R. · Superlattices and Microstructures · 1995 · Uluslararası · DOI: 10.1006/spmi.1995.1086
  39. Photo induced transient spectroscopy and in plane photovoltage in GaInNAs GaAs quantum wells
    Mazzucato S., Erol A., Teke A., Arikan M.C., Potter R.J., Balkan N., Marie X., Boland-Thoms A., Carrère H., Bedel E., Lacoste G., Fontaine C., Arnoult A. · Physica E: Low-dimensional Systems and Nanostructures · 2003 · Uluslararası · Q2 · DOI: 10.1016/S1386-9477(02)00786-5
  40. Group III Nitrides
    Ferreyra, Romualdo A., Zhu, Congyong, Teke, Ali, Morkoc, Hadis · SPRINGER HANDBOOK OF ELECTRONIC AND PHOTONIC MATERIALS, 2ND EDITION · 2017 · Uluslararası · DOI: 10.1007/978-3-319-48933-9_31
  41. Optimisation of the tunable wavelength hot electron light emitter
    Teke A. · Turkish Journal of Physics · 1999 · Uluslararası · Q4
  42. Structural analysis of a GaAs/AlxGa1-x As hot electron light emitter using double axis x-ray diffraction
    Teke A. · Turkish Journal of Physics · 2002 · Uluslararası · Q4
  43. Synthesis, structural properties and characterisation of self activating Na2Zr(BO3)2
    GACANOĞLU Şengül,GÜLER HALİL,TÜLEK REMZİYE,TEKE ALİ · CHEMISTRY RESEARCH JOURNAL · 2017 · Uluslararası
  44. Longitudinally biased GaAsAlxGa1 xAs hot electron VCSEL design
    TEKE ALİ · Fırat University, Journal of Science and Engineering · 2001 · Ulusal
  45. Optimisation of Tunable Wavelength Hot Electron Light Emitter
    TEKE ALİ,Balkan N · Turkish Journal of Physics · 1999 · Ulusal
  46. Structural Analysis of a GaAsAlxGa1 xAs Hot Electron Light Emitter Using Double Axis X Ray Diffraction
    TEKE ALİ · Turkish Journal of Physics · 2002 · Ulusal
  47. The applicability of a model to the degenerate InN
    Gokden S. , Teke A. , Baran R. · OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS · 2007 · Uluslararası

Bildiriler (4)

  1. Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients
    Can N,Okur S,Monavarian M,Zhang F,Avrutin V,Morkoç H,TEKE ALİ,Özgür Ü · Conference on Gallium Nitride Materials and Devices X · 2015 · Tam metin bildiri
  2. Hot Electron Light Emitting Semiconductor Heterojunction Devices Hellish Type 1 and Type 2
    Balkan N,Cunha A Da,Obrien A,TEKE ALİ,Gupta R,Straw A,ARIKAN MEHMET ÇETİN · 9th International Conference on Hot Carriers in Semiconductors · 1996 · Tam metin bildiri
  3. Epitaxy of highly optical efficient GaN on O and Zn face ZnO
    Gu X,Reshchikov M A,He L,TEKE ALİ,Yun F,Johnstone D K,Nemeth B,Nause J,Morkoç H · Symposium on GaN and Related Alloys held at the MRS Fall Meeting · 2003 · Tam metin bildiri
  4. Photoluminescence from freestanding GaN with 0110 orientation
    Reshchikov M A,TEKE ALİ,Maruska H P,Hill D W,Morkoç H · Symposium on GaN and Related Alloys held at the MRS Fall Meeting · 2003 · Tam metin bildiri

Kitaplar ve Kitap Bölümleri (3)

  1. Springer Handbook of Electronic and Photonic Materials
    Group III Nitrides · TEKE ALİ,Morkoç Hadis · Springer Science+Business Media,Inc. · 2006 · ISBN 10: 0-387-26059-5
  2. Springer Handbook of Electronic and Photonic Materials
    Group III Nitrides · Ferreyra Romualdo A,Zhu Congyong,TEKE ALİ,MORKOÇ HADİS · Springer · 2017 · ISBN 978-3-319-48931-5
  3. Handbook of Photonics
    III-V Nitrides and Silicon Carbide as Optoelectronic Materials · DOĞAN SEYDİ,TEKE ALİ,Morkoç Hadis · CRC Press, ToylarFrancis Group · 2007 · ISBN 10:0-8493-3095-5

Projeler (3)

  1. Görünmeyen Dünyada Yolculuk 2: Deneyden Deneyime Bir Nano Bilim Entegrasyon Projesi
    TÜBİTAK PROJESİ · Tamamlandı · 2019 - 2019
  2. Biyoloji Kimya ve Moleküler Biyolojinin Buluşma Noktası Biyokimya
    Kalkınma Bakanlığı · Tamamlandı · 2014 - 2015
  3. III V Tabanlı Yarıiletkenlerin Elektriksel ve Optiksel Karakterizasyonu
    DİĞER · Tamamlandı

Yönetilen Tezler (9)

  1. Bazı lantanit içeren maddelerin fosfor özelliklerinin yapısal ve optik karekterizasyonunun incelenmesi
    SİNEM ELİF KAYRAL · Yüksek Lisans · 2023 · Devam Ediyor
  2. Zn ve O Polar ZnO/GaN ince filmlerin fotolüminesans özelliklerinin karşılaştırılması
    MEHMET PARLAK · Yüksek Lisans · 2022 · Tamamlandı
  3. AlxGa1-xN/GaN 2 boyutlu elektron gazının elektriksel ve optiksel özellikleri arasındaki ilişkinin incelenmesi
    SALİH TOLGA BAYRAK · Yüksek Lisans · 2003 · Tamamlandı
  4. Farklı alaşım oranlarında alıngan dörtlü yapıların transport özellikleri
    ASLI BARAN · Yüksek Lisans · 2018 · Tamamlandı
  5. InGaN/GaN ışık yayan diyotların kuantum verimlerinin araştırılması
    NURİ CAN · Doktora · 2016 · Tamamlandı
  6. AlxGa1-xN/GaN çoklu kuantum kuyularının optiksel özellikleri
    ZEKİYE ŞİT · Yüksek Lisans · 2014 · Tamamlandı
  7. InGaN/GaN çoklu kuantum kuyulu ışık saçan diyotlar
    SALİH TOLGA BAYRAK · Doktora · 2011 · Tamamlandı
  8. Polar ve polar olmayan doğrultularda büyütülen gan tabakaların optik özellikleri
    NURİ CAN · Yüksek Lisans · 2011 · Tamamlandı
  9. Eriyik ve buhar tekniği ile büyütülen yüksek kalite ZnO kristallerinin optiksel özellikleri
    AYŞE KUZUCU · Yüksek Lisans · 2007 · Tamamlandı

Tezler (1)

  1. Hot Electron Light Emission inGaAs/AlxGa1-xAs Heterostructures
    1993 - 1997

Ödüller (1)

  1. Atıf Ödülü
    BALIKESİR ÜNİVERSİTESİ · 2011

Eğitim Bilgileri (2)

  1. Lisans - FİZİK BÖLÜMÜ
    ORTA DOĞU TEKNİK ÜNİVERSİTESİ · 1987 - 1992
  2. Bütünleşik Doktora
    University of Essex · 1993 - 1997